Effect of deposition temperature on the microstructure and electrical properties of Ba0.8Sr0.2TiO3 thin films deposited by radio-frequency magnetron sputtering

Jha, G. C. ; Ray, S. K. ; Manna, I. (2008) Effect of deposition temperature on the microstructure and electrical properties of Ba0.8Sr0.2TiO3 thin films deposited by radio-frequency magnetron sputtering Thin Solid Films, 516 (10). pp. 3416-3421. ISSN 0040-6090

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S00406...

Related URL: http://dx.doi.org/10.1016/j.tsf.2007.11.122

Abstract

Ba0.8Sr0.2TiO3 (BST) nanocrystalline thin films were deposited on n-type silicon substrates by radio-frequency magnetron sputtering technique at various deposition temperatures. X-ray diffraction confirmed that the deposited BST films were polycrystalline possibly due to recrystallization. Scanning electron microscopy study showed the evidence of resputtering in the films deposited at a high substrate temperature (600 °C). The electrical properties of the films were measured using an aluminum/BST/silicon metal-insulator-semiconductor capacitor configuration. Annealing seemed to enhance the dielectric constant of the as-deposited film. The film deposited at 300 °C showed the highest dielectric constant. Three-dimensional Monte-Carlo simulation confirmed that 300-350 °C would be the optimum deposition temperature range for the sputtering of BST films.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:Radio Frequency Magnetron Sputtering; BST; Monte-carlo Simulation
ID Code:18868
Deposited On:17 Nov 2010 12:22
Last Modified:06 Jun 2011 05:59

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