Pulsed excimer laser ablated copper indium diselenide thin films

Victor, P. ; Nagaraju, J. ; Krupanidhi, S. B. (2000) Pulsed excimer laser ablated copper indium diselenide thin films Solid State Communications, 116 (12). pp. 649-653. ISSN 0038-1098

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S00381...

Related URL: http://dx.doi.org/10.1016/S0038-1098(00)00409-9

Abstract

CuInSe2 thin films of thickness in the range of 0.45-1.8 µm were deposited on glass, Pt coated Si and Mo substrates by pulsed laser ablation at 150° C. Rapid thermal annealing (RTA) at a high heating rate was employed and its effect on crystallinity of the films was investigated. X-ray diffraction patterns of the RTA films, exhibited a highly preferred orientation along the (112) plane establishing the chalcopyrite structure. The composition of the as-grown and RTA films maintained the required stoichiometry ratios uniformly over a reasonable area. The EDAX composition analysis revealed that the films annealed at 500° C for 20 s were slightly indium rich, which consequently led the films to exhibit an n-type conductivity. However, RTA processing of the as-grown films at a higher temperature under controlled soaking time transformed the films to exhibit a p-type conductivity.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:A. Laser Ablation; B. Thin Films; C. Rapid Thermal Annealing
ID Code:18862
Deposited On:17 Nov 2010 12:16
Last Modified:06 Jun 2011 09:30

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