Analysis of leakage current conduction phenomenon in thin SrBi2Ta2O9 films grown by excimer laser ablation

Bhattacharyya, S. ; Laha, Apurba ; Krupanidhi, S. B. (2002) Analysis of leakage current conduction phenomenon in thin SrBi2Ta2O9 films grown by excimer laser ablation Journal of Applied Physics, 91 (7). pp. 4543-4548. ISSN 0021-8979

Full text not available from this repository.

Official URL: http://jap.aip.org/resource/1/japiau/v91/i7/p4543_...

Related URL: http://dx.doi.org/10.1063/1.1448396

Abstract

The dc conduction behavior of thin films of SrBi2Ta2O9 (SBT) has been investigated on the basis of space-charge limited current theory. The theory was generalized to account for the traps, which were inevitably present in this case. The relative percentage of trapped injected charge and the free injected charge was seen to follow a dynamical equilibrium instead of the true thermal equilibrium as the temperature of the sample was raised during the measurement. The onset voltage of the trap filled region (VTFL) showed a decreasing trend with the increase of temperature. This reduction of VTFL was ascribed to the appearance of some excess charge in the conduction band. It was seen that the thermodynamically stable distribution of charges among the energy levels could not be taken to explain such a situation. A dynamic model was proposed to explain this kind of a nonequilibrium distribution of trapped and free charges.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
ID Code:18859
Deposited On:17 Nov 2010 12:16
Last Modified:06 Jun 2011 07:33

Repository Staff Only: item control page