Rapid thermal processed thin films of niobium pentoxide (Nb2O5) deposited by reactive magnetron sputtering

Pignolet, A. ; Rao, G. Mohan ; Krupanidhi, S. B. (1995) Rapid thermal processed thin films of niobium pentoxide (Nb2O5) deposited by reactive magnetron sputtering Thin Solid Films, 261 (1-2). pp. 18-24. ISSN 0040-6090

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S00406...

Related URL: http://dx.doi.org/10.1016/S0040-6090(94)06470-9

Abstract

Niobium pentoxide thin films have been deposited on silicon and platinum-coated silicon substrates by reactive magnetron sputtering. The as-deposited films were amorphous and showed good electrical properties in terms of a dielectric permittivity of about 30, and leakage current density of 10-6 A cm-2 at a field of 120 kV cm-1. A rapid thermal annealing process at 800 ° C further increased the dielectric constant to 90 and increased the leakage current density to 5 × 10-6 A cm-2. The current-voltage characteristics observed at low and high fields suggested a combination of phenomena at different regimes of applied electric field. The capacitance-voltage characteristics performed in the metal-insulator-semiconductor configuration indicated good electronic interfaces with a nominal trap density of 4.5 × 1012 cm-2 eV-1, which is consistent with the behavior observed with conventional dielectrics such as SiO2 on silicon surfaces.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:Annealing; Electrical Properties and Measurements; Niobium Oxide; Sputtering
ID Code:18843
Deposited On:17 Nov 2010 12:18
Last Modified:06 Jun 2011 10:39

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