Pulsed excimer laser ablation growth and characterization of Ba(Sn0.1Ti0.9)O3 thin films

Halder, S. ; Victor, P. ; Laha, A. ; Bhattacharya, S. ; Krupanidhi, S. B. ; Agarwal, G. ; Singh, A. K. (2002) Pulsed excimer laser ablation growth and characterization of Ba(Sn0.1Ti0.9)O3 thin films Solid State Communications, 121 (6-7). pp. 329-332. ISSN 0038-1098

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S00381...

Related URL: http://dx.doi.org/10.1016/S0038-1098(02)00017-0

Abstract

Polycrystalline thin films of Ba(Sn0.1Ti0.9)O3 were deposited on Pt coated silicon substrates by pulsed excimer laser ablation technique. The room temperature dielectric constant of the Ba(Sn0.1Ti0.9)O3 films was 350 at a frequency of 100 kHz. The films showed a slightly diffused phase transition in the range of 275-340 K. The polarization hysteresis behavior confirmed the ferroelectric nature of the thin films. Remanent polarization (Pr) and saturation polarization (Ps) were 1.1 and 3.2 µC/cm2, respectively. The asymmetric capacitance-voltage curve for Ba(Sn0.1Ti0.9)O3 was attributed to the difference in the nature of the electrodes. Dispersion in both the real (ε 'r) and imaginary (ε"r) parts of the dielectric constant at low frequencies with increase in temperature was attributed to space charge contribution in the complex dielectric constant.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:A. Ferroelectrics; B. Laser Ablation Thin Films; D. Phase Transition
ID Code:18833
Deposited On:17 Nov 2010 17:49
Last Modified:06 Jun 2011 11:35

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