Effect of Li substitution on dielectric and ferroelectric properties of ZnO thin films grown by pulsed-laser ablation

Dhananjay, ; Nagaraju, J. ; Krupanidhi, S. B. (2006) Effect of Li substitution on dielectric and ferroelectric properties of ZnO thin films grown by pulsed-laser ablation Journal of Applied Physics, 99 (3). 034105_1-034105_6. ISSN 0021-8979

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Official URL: http://jap.aip.org/resource/1/japiau/v99/i3/p03410...

Related URL: http://dx.doi.org/10.1063/1.2169508

Abstract

Li-doped ZnO thin films (Zn1-xLixO, x = 0.05-0.15) were grown by pulsed-laser ablation technique. Highly c-axis-oriented films were obtained at a growth temperature of 500° C. Ferroelectricity in Zn1-xLixO was found from the temperature-dependent dielectric constant and from the polarization hysteresis loop. The transition temperature (Tc) varied from 290 to 330 K as the Li concentration increased from 0.05 to 0.15. It was found that the maximum value of the dielectric constant at Tc is a function of Li concentration. A symmetric increase in memory window with the applied gate voltage is observed for the ferroelectric thin films on a p-type Si substrate. A ferroelectric P-E hysteresis loop was observed for all the compositions. The spontaneous polarization (Ps) and coercive field (Ec) of 0.6 µ C/cm2 and 45 kV/cm were obtained for Zn0.85Li0.15O thin films. These observations reveal that partial replacement of host Zn by Li ions induces a ferroelectric phase in the wurtzite-ZnO semiconductor. The dc transport studies revealed an Ohmic behavior in the lower-voltage region and space-charge-limited conduction prevailed at higher voltages. The optical constants were evaluated from the transmission spectrum and it was found that Li substitution in ZnO enhances the dielectric constant.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
ID Code:18820
Deposited On:17 Nov 2010 12:20
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