Bhattacharyya, S. ; Bharadwaja, S. S. N. ; Krupanidhi, S. B. (1999) Growth and characterization of SrBi2Nb2O9 thin films by pulsed-laser ablation Applied Physics Letters, 75 (17). pp. 2656-2658. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v75/i17/p2656...
Related URL: http://dx.doi.org/10.1063/1.125109
Abstract
Polycrystalline films of SrBi2Nb2O9 were grown using pulsed-laser ablation. The ferroelectric properties were achieved by low-temperature deposition followed by a subsequent annealing process. The lower switching voltage was obtained by lowering the thickness, which did not affect the insulating nature of the films. The hysteresis results showed an excellent square-shaped loop with results (Pr = 6µ C/cm2, Ec = 100kV/cm) in good agreement with earlier reports. The films also exhibited a dielectric constant of 250 and a dissipation factor of 0.02. The transport studies indicated an ohmic behavior, while higher voltages induced a bulk space charge.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 18811 |
| Deposited On: | 17 Nov 2010 12:21 |
| Last Modified: | 06 Jun 2011 10:26 |
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