Strontium titanate thin films by rapid thermal processing

Abstract

SrTiO₃ thin films having perovskite structure were fabricated by sol-gel technique with a post-deposition rapid thermal annealing treatment at 550° C for 60 s. The films exhibited good structural, dielectric, and insulating properties. The measured dielectric constant and loss factor at 100 kHz were 225 and 0.008, respectively. Unit area capacitance of 3.5 fF/µ m² and leakage current density of less than 10^-8 A/cm² were obtained for 500-800 nm thick films. A charge storage density of 18.3 fC/µm² was obtained at an applied electric field of 100 kV/cm. The resistivity of these films was in the range of 10¹⁰-10¹³ Ωcm. The C-V measurements on films in metal-insulator-semiconductor (MIS) configuration indicated good Si/SrTiO₃ interface characteristics.