Electrical characteristics of excimer laser ablated bismuth titanate films on silicon

Maffei, N. ; Krupanidhi, S. B. (1992) Electrical characteristics of excimer laser ablated bismuth titanate films on silicon Journal of Applied Physics, 72 (8). pp. 3617-3621. ISSN 0021-8979

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Official URL: http://jap.aip.org/resource/1/japiau/v72/i8/p3617_...

Related URL: http://dx.doi.org/10.1063/1.352303

Abstract

Bismuth titanate thin films were deposited by the excimer laser ablation technique directly onto bare silicon substrates. Current-voltage studies suggested the formation of a heterojunction at the Bi4Ti3O12/Si interface. The current characteristics at voltages >1 V were ascribed to trap-limited space-charge conduction. Hysteretic capacitance-voltage data indicated that charge injection was dominant, masking any polarization mode necessary for nonvolatile memory operation. Ferroelectric hysteretic studies, however, indicated that the films were ferroelectric with Pr10 µ C/cm2 and Ec150 kV/cm.

Item Type:Article
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