Rapid thermal processed thin films of reactively sputtered Ta2O5

Pignolet, A. ; Rao, G. Mohan ; Krupanidhi, S. B. (1995) Rapid thermal processed thin films of reactively sputtered Ta2O5 Thin Solid Films, 258 (1-2). pp. 230-235. ISSN 0040-6090

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/004060...

Related URL: http://dx.doi.org/10.1016/0040-6090(94)06322-2


Rapid thermal processed thin films of reactively sputtered tantalum pentoxide Ta2O5 thin films have been deposited on silicon and platinum coated silicon substrates by reactive magnetron sputtering. The as-deposited films were amorphous and showed good electrical properties in terms of a dielectric permittivity of about 24 and leakage current density of 9 × 10-8 A cm-2. A rapid thermal annealing process at temperatures above 700 ° C crystallized the films, increased the dielectric relative permittivity, and decreased the leakage current. The dielectric constant for a film rapidly annealed at 850 ° C increased to 45 and its leakage current density lowered to 2 × 10-8 A cm-2. The dielectric measurements in the MIS configuration showed that Ta2O5 might be used as a dielectric material instead of SiO2 or Si3N4 for integrated devices. The current voltage characteristics observed at low and high fields suggested different conduction mechanisms.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:Amorphous Materials; Dielectric Properties; Electrical Properties and Measurements; Sputtering
ID Code:18763
Deposited On:17 Nov 2010 12:26
Last Modified:06 Jun 2011 10:41

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