Roy, D. ; Krupanidhi, S. B. (1993) Excimer laser ablated barium strontium titanate thin films for dynamic random access memory applications Applied Physics Letters, 62 (10). pp. 1056-1058. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v62/i10/p1056...
Related URL: http://dx.doi.org/10.1063/1.108793
Abstract
Polycrystalline thin films of Ba0.5Sr0.5TiO3 were deposited by excimer laser (248 nm) ablation. Films deposited near 575° C exhibited good crystallinity, a dielectric constant of 330, a dissipation factor of 0.02, a leakage current density of 2×10-7 A/cm2, a charge storage density of 36 fC/µm2, and breakdown time of 3700 s at an applied electric field of 0.125 MV/cm. The C-V (capacitance-voltage) behavior of both MFM (metal-ferroelectric-metal) and MFS (metal-ferroelectric-semiconductor) structures were studied and the estimated dielectric permittivity in the accumulation region of MFS structure nearly indicated the bulk value, suggesting a reasonably good Ba0.5Sr0.5TiO3/Si interface.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 18734 |
| Deposited On: | 17 Nov 2010 12:30 |
| Last Modified: | 06 Jun 2011 11:46 |
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