Hegde, M. S. ; Thomas, Boben ; Vasanthacharya, N. Y. ; Bhat, S. V. ; Srinivasu, V. V. ; Kumar, N. (1993) Critical-current variation with Pr content in Y1-xPrxBa2Cu3O7 epitaxial films Physical Review B, 48 (9). pp. 6465-6469. ISSN 0163-1829
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Official URL: http://prb.aps.org/abstract/PRB/v48/i9/p6465_1
Related URL: http://dx.doi.org/10.1103/PhysRevB.48.6465
Abstract
c-axis-oriented epitaxial Y1-xPrxBa2Cu3O7 (x=0, 0.05, 0.1, 0.2, 0.3, and 0.35) thin films have been grown with the pulsed-laser-deposition method. Superconducting transition temperatures of the films are within ±2 K of the corresponding polycrystalline bulk samples. The critical current density Jc of Pr-doped films for x=0.1-0.3 is about two orders of magnitude lower than of the pure 1:2:3 films. This exponential fall in Jc with doping (x) can be understood semiquantitatively in terms of depairing due to a random-impurity (Pr-ion) potential causing localized suppression of the superconducting order parameter around the impurity to about the in-plane coherence length.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Physical Society. |
| ID Code: | 18371 |
| Deposited On: | 17 Nov 2010 09:21 |
| Last Modified: | 23 May 2011 07:57 |
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