X-ray diffraction from a SiC crystal undergoing the 3c–6h solid state transformation by non-random microtwinning

Sebastiak, M. T. ; Krishna, P. (1984) X-ray diffraction from a SiC crystal undergoing the 3c–6h solid state transformation by non-random microtwinning Physica Status Solidi A, 84 (2). pp. 401-409. ISSN 0031-8965

Full text not available from this repository.

Official URL: http://onlinelibrary.wiley.com/doi/10.1002/pssa.22...

Related URL: http://dx.doi.org/10.1002/pssa.2210840207

Abstract

Recent high resolution electron microscope studies of the 3C-6H transformation in SiC have shown that the transformation occurs by a process of non-random microtwinning. A theoretical model is developed for the transformation assuming that the twin faults occur preferentially at three layer spacings with a probability (β) which is greater than the probability (α) of their occurrence at larger separations. Then a corresponds to the probability of random nucleation of the 6H phase in the 3C matrix and β to the growth of the 6H nuclei. The probability of microtwinning at less than three-layer separations is assumed t o be negligible. On the basis of such a model the X-ray diffraction effects are predicted from a partially transformed crystal. The peak broadening and peak shifts of the 3C and 6H reflections are computed for various values of a and β. The proposed mechanism of transformation can be experimentally verified by recording the intensity profiles from electron diffraction patterns or by single crystal diffractometry of a partially transformed crystal.

Item Type:Article
Source:Copyright of this article belongs to John Wiley and Sons, Inc.
ID Code:18191
Deposited On:17 Nov 2010 13:01
Last Modified:01 Oct 2011 09:13

Repository Staff Only: item control page