Kuruvilla, Beena Annie ; Datta, A. ; Shekhawat, G. S. ; Sharma, A. K. ; Vyas, P. D. ; Gupta, R. P. ; Kulkarni, S. K. (1996) Atomic force microscopy of selenium sulfide passivated GaAs (100) surface Applied Physics Letters, 69 (3). pp. 415-417. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v69/i3/p415_s...
Related URL: http://dx.doi.org/10.1063/1.118079
Abstract
Surface structure studies of GaAs(100) with and without chemical passivation have been made using atomic force microscopy (AFM). Passivation was carried out using a solution of SeS2 which has proved to be a successful passivating agent as seen from the increase in the photoluminescence (PL) intensity. Atomic force microscopy results indicate that it is possible to obtain ordered surface layers on GaAs using SeS2.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Gallium Arsenides; Atomic Force Microscopy; Selenium Sulfides; Surface Structure; Passivation; Photoluminescence |
| ID Code: | 18027 |
| Deposited On: | 17 Nov 2010 13:19 |
| Last Modified: | 04 Jun 2011 08:55 |
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