Self-assembled Ge nanostructures as field emitters

Tondare, V. N. ; Birajdar, B. I. ; Pradeep, N. ; Joag, D. S. ; Lobo, A. ; Kulkarni, S. K. (2000) Self-assembled Ge nanostructures as field emitters Applied Physics Letters, 77 (15). pp. 2394-2396. ISSN 0003-6951

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Official URL: http://apl.aip.org/resource/1/applab/v77/i15/p2394...

Related URL: http://dx.doi.org/10.1063/1.1316076

Abstract

Self-assembled two-dimensional arrays of Ge islands on Si(111)7×7 were grown by depositing Ge on Si(111)7×7 substrates held at 650 K. It was observed that these islands were conical in shape as well as nearly uniform in size and shape. Consequently, the substrates of about 1 cm2 area were used as field-emitter arrays. It was found that the arrays exhibited a low onset voltage for field emission, large emission current, as well as high current stability.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
Keywords:Germanium; Elemental Semiconductors; Semiconductor Quantum Dots; Self-assembly; Island Structure; Arrays; Electron Field Emission; Vacuum Microelectronics
ID Code:18024
Deposited On:17 Nov 2010 13:19
Last Modified:04 Jun 2011 08:47

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