Srinivasan, G. ; Kulkarni, S. K. ; Bhide, V. G. ; Nigavekar, A. S. (1988) Experimental elucidation of hydrogen local density of states in hydrogenated amorphous silicon Physics Letters A, 127 (3). pp. 183-187. ISSN 0375-9601
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/037596...
Related URL: http://dx.doi.org/10.1016/0375-9601(88)90098-9
Abstract
Ultraviolet and X-ray photoemission spectroscopies (UPS and XPS) are used to study the valence band in device quality hydrogenated amorphous silicon films (s-Si:H). Their results are combined to obtain estimated information about the hydrogen local density of states (HLDOS). The monohydride bonding configuration and the occurence of interhydride bonding between H atoms are confirmed by the experimental data.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 17994 |
| Deposited On: | 17 Nov 2010 13:22 |
| Last Modified: | 19 May 2011 05:34 |
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