Gokhale, Shubha ; Mahamuni, Shailaja ; Deshmukh, S. V. ; Rao, V. J. ; Nigavekar, A. S. ; Kulkarni, S. K. (1990) Photoemission and x-ray diffraction study of the Er/Si(111) interface Surface Science, 237 (1-3). pp. 127-134. ISSN 0039-6028
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/003960...
Related URL: http://dx.doi.org/10.1016/0039-6028(90)90525-D
Abstract
The Er-Si interface has been studied using XPS, UPS and glancing incidence XRD. Room temperature investigations of the evolving Er-Si interface reveal a two step reaction. Initially reacted clusters of silicon rich silicide form. At higher coverages, metal rich Er5Si3 formation takes place. High temperature annealing leads to stable disilicide formation at the interface.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 17952 |
| Deposited On: | 17 Nov 2010 13:27 |
| Last Modified: | 04 Jun 2011 09:03 |
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