Chemical interaction at the Tm/Si(111) interface

Gokhale, Shubha ; Mahamuni, Shailaja ; Joshi, Kiran ; Nigavekar, A. S. ; Kulkarni, S. K. (1991) Chemical interaction at the Tm/Si(111) interface Surface Science, 257 (1-3). pp. 157-166. ISSN 0039-6028

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Interface investigations of Tm/Si(111) have been carried out using XPS, UPS and glancing incidence XRD at various temperatures. Room temperature interface evolution takes place in three stages. Initially there is no reaction between adsorbate and substrate and Tm clusters are formed. In the second regime cluster coalescence takes place and there is a strong interaction between Tm and Si to form TmSi2. Finally, metal-rich Tm5Si3 phase formation takes place. High-temperature studies reveal that at 473 K, predominantly the Tm5Si3 phase is present with some TmSi2, while the film is completely converted into a disilicide phase by annealing at 673 K. Binding energies of Si 2p corresponding to various Tm silicides are identified. At all temperatures, throughout the interface development, Tm was found to be trivalent in nature.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
ID Code:17925
Deposited On:17 Nov 2010 13:30
Last Modified:04 Jun 2011 09:05

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