Panchakarla, L. S. ; Subrahmanyam, K. S. ; Saha, S. K. ; Govindaraj, Achutharao ; Krishnamurthy, H. R. ; Waghmare, U. V. ; Rao, C. N. R. (2009) Synthesis, structure, and properties of boron- and nitrogen-doped graphene Advanced Materials, 21 (46). pp. 4726-4730. ISSN 0935-9648
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Official URL: http://onlinelibrary.wiley.com/doi/10.1002/adma.20...
Related URL: http://dx.doi.org/10.1002/adma.200901285
Abstract
Boron- and nitrogen-doped graphenes are are prepared by the arc discharge between carbon electrodes or by the transformation of nanodiamond under appropriate atmospheres. Using a combination of experiment and theories based on first principles, systematic changes in the carrier-concentration and electronic structure of the doped graphenes are demonstrated. Stiffening of the G-band mode and intensification of the defect-related D-band in the Raman spectra are also observed.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to John Wiley and Sons, Inc. |
| Keywords: | Doping; Grapheme; Structure-property Relationships |
| ID Code: | 17550 |
| Deposited On: | 16 Nov 2010 09:35 |
| Last Modified: | 17 May 2016 02:10 |
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