Pulsed laser deposition of indium antimonide

Venkataraghavan, R. ; Satyalakshmi, K. M. ; Rao, K. S. R. K. ; Sreedhar, A. K. ; Hegde, M. S. ; Bhat, H. L. (1996) Pulsed laser deposition of indium antimonide Bulletin of Materials Science, 19 (1). pp. 123-129. ISSN 0250-4707

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Official URL: http://www.ias.ac.in/j_archive/bms/19/1/123-129/vi...

Related URL: http://dx.doi.org/10.1007/BF02744794

Abstract

Single crystalline oriented films of indium antimonide have been grown on cadmium telluride substrates by the pulsed laser deposition technique. The films were (111) oriented which is the substrate orientation. The composition of the grown films were found to deviate from that of the target owing to loss of antimony during evaporation. This deviation from stoichiometry led to film-substrate reaction, resulting in mixed interface. The antimony deficiency in the films were controlled by correcting the stoichiometry, which led to avoiding mixed interfaces. The stoichiometric films showed good surface morphology and well defined sharp interfaces. The IR transmission spectrum showed sharp band to band absorption and effective detection in the MWIR.

Item Type:Article
Source:Copyright of this article belongs to Indian Academy of Sciences.
Keywords:PLD; Indium Antimonide; Morphology; Interface; In2Te3; InTe
ID Code:16493
Deposited On:15 Nov 2010 09:33
Last Modified:17 May 2016 01:14

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