Sarker, Arindam ; Banerjee, Chandan ; Barua, A. K. (2005) Lowering of thickness of boron-doped microcrystalline hydrogenated silicon film by seeding technique Solar Energy Materials and Solar Cells, 86 (3). pp. 365-371. ISSN 0927-0248
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S09270...
Related URL: http://dx.doi.org/10.1016/j.solmat.2004.08.005
Abstract
By using a seeding technique it has been possible to reduce the thickness of p-μc-Si:H film to 230 Å, with an improved electrical conductivity (0.93 S cm-1) and lower optical absorption compared to those of conventional p-μc-Si:H layers without a seed layer, for use at the tunnel junction and as the top layer of a double junction n-i-p structured a-Si solar cell. Undoped-μc-Si:H has been used as the seed layer. The layers were prepared by the radio frequency plasma-enhanced chemical vapour deposition (RF-PECVD) method (13.56 MHz) at 40 mW/cm2 rf power density and low substrate temperature (200ÅC). The ultrathin seed layer (~30 Å) enhances the growth of microcrystallinity of the p-type μc-Si:H film as confirmed by the results of transmission electron microscopy (TEM) analysis and Raman spectroscopy.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | Microcrystallinity; Seed Layer; Tunnel Junction; Transmission Electron Microscopy (TEM); Raman Spectroscopy |
| ID Code: | 1638 |
| Deposited On: | 05 Oct 2010 12:09 |
| Last Modified: | 13 May 2011 09:22 |
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