Das, Debajyoti ; De, S. C ; Ray, Swati ; Batabyal, A. K. ; Barua, A. K. (1989) Device quality a-SiGe:H films for multijunction solar cells Journal of Non-Crystalline Solids, 114 (2). pp. 552-554. ISSN 0022-3093
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/002230...
Related URL: http://dx.doi.org/10.1016/0022-3093(89)90647-9
Abstract
Hydrogenated amorphous silicon-germanium films of different optical band gaps have been prepared by rf glow discharge method and their opto-electronic properties have been investigated. Photovoltaic quality of the material has been estimated in terms of a conceptually new Quality Factor, Q = photoconductivity X photosensitivity. At a deposition temperature of 250°C, films of Eg = 1.53 eV with O=5.6×101 have been reported.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 1634 |
| Deposited On: | 05 Oct 2010 12:24 |
| Last Modified: | 13 May 2011 09:53 |
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