Ion-beam-hydrogenated amorphous silicon

Tsuo, Y. S. ; Deng, X. J. ; Xu, Y. ; Barua, A. K. ; Asher, S. ; Deb, S. K. (1988) Ion-beam-hydrogenated amorphous silicon Materials Research Society Symposium Proceedings, 118 . pp. 153-158. ISSN 0272-9172

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A kaufman ion-beam source has been used to study the rehydrogenation and postdeposition hydrogenation of amorphous silicon. In the rehydrogenation study, hydrogen atoms were implanted into glow-dischargedeposited amorphous silicon materials in which the hydrogen content had been driven out by heating. In the posthydrogenation study, amorphous silicon samples with no hydrogen content detectable by infrared absorption and no photoconductivity were used as the starting material. These materials were deposited by thermal CVD, magnetron sputtering, or RF glow discharge.

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