Characterization of undoped μc-SiO:H films prepared from (SiH₄+CO₂+H₂)-plasma in RF glow discharge

Abstract

Undoped hydrogenated microcrystalline silicon oxygen alloy films (μc-SiO:H) have been prepared from (SiH₄+CO₂+H₂)-plasma in RF glow discharge at a high H₂ dilution, moderately high RF power and substrate temperature. A detailed characterization of the films has been done by electrical, optical as well as structural studies, e.g., IR absorption spectroscopy, Raman scattering and transmission electron microscopy. The presence of a very small amount of oxygen induces the crystallization process, which fails to sustain at a higher oxygen dilution. At higher deposition temperature and in improved µc-network H content reduces, however, O incorporation is favoured. Sharp crystallographic rings in the electron diffraction pattern identify several definite planes of c-Si and no such crystal planes from c-SiO_X is detected.