Electronic and optical properties of boron doped hydrogenated amorphous silicon thin films

Abstract

The electronic and optical properties of p-type a-Si:H films prepared by the rf glow discharge decomposition of a mixture of silane and diborane gases have been studied. The films have been prepared under different conditions which include variation of volume ration of B₂H₆ and SiH₄ and rf power. The properties of compensated a-Si:H films prepared with very small boron doping have also been studied. The effects of mixing Ar with SiH₄ + B₂H₆ mixture have been investigated. The properties actually studied include (1) dark conductivity, (2) steady state photoconductivity, (3) spectral response, (4) optical absorption and band gap. Attempts have been made to analyse the data to yield information about the transport mechanism, and the existence of hole and electron traps.