Bose, Subhasis ; Ray, Swati ; Barua, A. K. (1996) Textured aluminium-doped ZnO thin films prepared by magnetron sputtering Journal of Physics D: Applied Physics, 29 (7). pp. 1873-1877. ISSN 0022-3727
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Official URL: http://iopscience.iop.org/0022-3727/29/7/022
Related URL: http://dx.doi.org/10.1088/0022-3727/29/7/022
Abstract
The electrical properties of RF magnetron-sputtered aluminium-doped zinc oxide (AZO) films are studied. It is seen that the properties are closely related to their structural properties and doping incorporation. The highly conductive milky AZO films with a wedge-like surface consist of very small crystal grains. It is interesting to note that texturization is obtained in this case at a film thickness less than 1µm. At a substrate temperature of 150°C, texturization occurs and the resistivity obtained after hydrogen treatment is 6.9 × 10-4Ωcm. This result is very significant and it may accelerate the application of inexpensive AZO films in hydrogenated amorphous silicon solar cells.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Physics Publishing. |
| ID Code: | 1618 |
| Deposited On: | 05 Oct 2010 12:11 |
| Last Modified: | 13 May 2011 09:50 |
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