Bilayer SnO2:In/SnO2 thin films as transparent electrodes of amorphous silicon solar cells

Ray, Swati ; Dutta, Joydeep ; Barua, A. K. ; Deb, S. K. (1991) Bilayer SnO2:In/SnO2 thin films as transparent electrodes of amorphous silicon solar cells Thin Solid Films, 199 (2). pp. 201-207. ISSN 0040-6090

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/004060...

Related URL: http://dx.doi.org/10.1016/0040-6090(91)90001-E

Abstract

Bilayer films of SnO2:In/SnO2 were deposited, and the deposition parameters of these films were optimized to obtain good electrical and optical properties for application as the transparent electrode of amorphous silicon solar cells. A depth-profiling technique using secondary ion mass spectrometry was used to study the diffusion of elements. The SnO2 layer thickness was varied to check the diffusion of indium into the p and i layers, which affects the electrical properties of the amorphous layers of the solar cell. Optimization of SnO2 layer thickness allows us to raise the p-layer deposition temperature to 180ο C without enhancing indium diffusion into the p-i interface.

Item Type:Article
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ID Code:1614
Deposited On:05 Oct 2010 12:12
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