Thickness dependence of light-induced effects in a-Si solar cells

Chaudhuri, P. ; Ray, S. ; Batabyal, A. K. ; Barua, A. K. (1991) Thickness dependence of light-induced effects in a-Si solar cells Solar Cells, 31 (1). pp. 13-21. ISSN 0379-6787

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/037967...

Related URL: http://dx.doi.org/10.1016/0379-6787(91)90003-8

Abstract

A systematic study of the changes in photovoltaic properties of amorphous silicon p-i-n-type solar cells upon 100 h of white light (air mass (AM) 1.5 G) soaking has been made with the thickness of the i layer as variable parameter. The thickness of the i layer ranged from 700 to 7500 Å . A significant rise in open-circuit voltage was observed in cells having an i layer less than 2500 Å thick. This is explained as an effect of doping enhancement in the p and n layers of the cell upon light soaking. A study of collection efficiency spectra revealed that with an increase in i layer thickness the degradation increases towards longer wavelengths.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
ID Code:1609
Deposited On:05 Oct 2010 12:12
Last Modified:13 May 2011 09:53

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