Development of wide band gap n-a-SiO:H films using RF-PECVD method for application in a-Si solar cell fabrication

Abstract

Wide band gap n-a-SiO:H films have been developed at ultra high vacuum (UHV) condition by varying deposition conditions having suitable characteristics for use as the bottom layer of single junction a-Si solar cells. The films have been prepared by radio frequency plasma enhanced chemical vapour deposition (RF-PECVD) method (13.56 MHz) at suitable power and pressure for the fabrication of a-Si solar cells. n-a-SiO:H films have superior properties than those of conventional n-a-Si:H films. The band gap of n-a-SiO:H film is much higher than that of n-a-Si:H film having the same conductivity. The use of this material as the bottom layer of a p-i-n structured single junction a-Si solar cell enhances the short circuit current of the cell and the conversion efficiency as well.