Jana, Madhusudan ; Das, Debajyoti ; Kshirsagar, S. T. ; Barua, Asok K. (1999) Control of crystallization at low thickness in μc-Si:H films using layer-by-layer growth scheme Japanese Journal of Applied Physics, 38 (10A). L1087-L1090. ISSN 0021-4922
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Official URL: http://jjap.ipap.jp/link?JJAP/38/L1087/
Related URL: http://dx.doi.org/10.1143/JJAP.38.L1087
Abstract
Hydrogen plasma treatment of stacking layers in a layer-by-layer (LBL) growth scheme effectively modulates the network structure from the surface into the bulk through the growth zone by abstraction of hydrogen from the Si:H matrix. It is an efficient way of reducing the microcrystalline transition layer so that virtual saturation of the crystallization may be obtained at a significantly low thickness of the sample compared to that obtained by a continuous mode of deposition. The growth of a highly conducting undoped σc-Si:H film at a stacked layer thickness of ~650 Å is described. The film has a dark conductivity, σD, of ~4×10-3 S·cm-1 and exhibits a very high crystallinity, as determined by Raman scattering and transmission electron microscope studies.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Pure and Applied Physics. |
| Keywords: | Stacked Layer Thin Films; Hydrogenated Microcrystalline Silicon; Amorphous Incubation Layer; Microcrystalline Transition Layer; Rf Glow Discharge; Raman Scattering; Transmission Electron Microscopy |
| ID Code: | 1563 |
| Deposited On: | 05 Oct 2010 12:17 |
| Last Modified: | 13 May 2011 09:36 |
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