Improved quality a-SiC:H films prepared by photo chemical vapour decomposition of silane and acetylene

Ray, Swati ; Ghosh, Sukriti ; De, Abhijit ; Barua, A. K. (1994) Improved quality a-SiC:H films prepared by photo chemical vapour decomposition of silane and acetylene Solar Energy Materials and Solar Cells, 33 (4). pp. 517-531. ISSN 0927-0248

Full text not available from this repository.

Official URL: http://linkinghub.elsevier.com/retrieve/pii/092702...

Related URL: http://dx.doi.org/10.1016/0927-0248(94)90011-6

Abstract

Hydrogenated amorphous and microcrystalline silicon carbon alloy films have been grown by photo-CVD using C2H2 as a source gas of carbon. The hydrogenated amorphous silicon carbon (a-SiC:H) film with a band gap of ~2.0 eV prepared at a very low hydrogen (LD) concentration exhibits better photo-electronic properties compared to that at high hydrogen dilution (HD) having a similar optical gap. Notwithstanding a high deposition rate, the high photosensitivity (~106), the low density of the defect states ( ~6 × 1016cm-3) and the Urbach energy parameter (72 meV) for the a-SiC:H film prepared at low hydrogen dilution and pressure are impressive. On the other hand, low pressure along with high hydrogen dilution have been found to be conducive to microcrystalline silicon carbon alloy (μc-Si:H) formation. Interestingly, crystallites are of silicon while carbon remains in the amorphous and grain boundary regions.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
ID Code:1557
Deposited On:05 Oct 2010 12:18
Last Modified:13 May 2011 09:50

Repository Staff Only: item control page