A comparative study of two phenomenological models of dephasing in series and parallel resistors

Bandopadhyay, Swarnali ; Chaudhuri, Debasish ; Jayannavar, Arun M. (2010) A comparative study of two phenomenological models of dephasing in series and parallel resistors Physics Letters A, 374 (6). pp. 813-818. ISSN 0375-9601

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S03759...

Related URL: http://dx.doi.org/10.1016/j.physleta.2009.12.004

Abstract

We compare two recent phenomenological models of dephasing using a double barrier and a quantum ring geometry. While the stochastic absorption model generates controlled dephasing leading to Ohm's law for large dephasing strengths, a Gaussian random phase based statistical model shows many inconsistencies.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:Electronic Transport; Mesoscopic System; S-matrix; Dephasing
ID Code:14679
Deposited On:12 Nov 2010 13:50
Last Modified:03 Jun 2011 10:13

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