Role of defects in transport through a quantum dot single electron transistor

Abstract

The effect of a single dotlike defect on the transport through a quantum dot single electron transistor weakly coupled to external leads is studied. It is found that the conductance profile is changed significantly by the quantum mechanical tunneling between the dot and the defect and the interactions between them, both of which are dependent on the distance between the dot and the defect, as also by the morphology of the defect. In particular, we find that even a very small strength of interdot interaction has a major influence on the transport and must be taken into account in device fabrication.