Temperature dependence of the c-axis resistivity of high-Tc layered oxides

Kumar, N. ; Jayannavar, A. M. (1992) Temperature dependence of the c-axis resistivity of high-Tc layered oxides Physical Review B, 45 (9). pp. 5001-5004. ISSN 0163-1829

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Official URL: http://link.aps.org/doi/10.1103/PhysRevB.45.5001

Related URL: http://dx.doi.org/10.1103/PhysRevB.45.5001

Abstract

Electrical transport along the c axis of high-Tc layered oxides is pictured as a coherent interplanar tunneling between neighboring layers blocked by repeated intraplanar incoherent scatterings. This gives the same temperature dependence for the c-axis resistivity as that for the in-plane resistivity. Additional temperature dependence can arise from the temperature-dependent renormalization of the tunneling matrix element by an ohmic coupling to adiabatic phonons because of the large effective electron mass along the c axis. Our calculation is consistent with recent experimental results on single crystals, and makes some definite predictions that can be put to test.

Item Type:Article
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ID Code:14509
Deposited On:12 Nov 2010 14:09
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