Enhancing SRAM-Based PUF Reliability Through Machine Learning-Aided Calibration Techniques

Pratihar, Kuheli ; Chatterjee, Soumi ; Subhra Chakraborty, Rajat ; Mukhopadhyay, Debdeep (2024) Enhancing SRAM-Based PUF Reliability Through Machine Learning-Aided Calibration Techniques IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 43 (11). pp. 3491-3502. ISSN 0278-0070

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Official URL: https://doi.org/10.1109/TCAD.2024.3449570

Related URL: http://dx.doi.org/10.1109/TCAD.2024.3449570

Abstract

Static random access memory (SRAM)-based physically unclonable functions (PUFs) utilize unpredictable start-up values (SUVs) for key generation, making them widely adopted in cryptographic systems. This unpredictability in SUVs is accompanied by device noise that escalates with process-voltage–temperature (PVT) variations, resulting in significant deviations from the golden response collected at ambient conditions, thereby increasing the bit-error-rate (BER) of the PUF responses. To reduce this high- (≥15%) BER, either an involved error correcting code (ECC) circuitry with significant overhead is required, or more helper information needs to be generated at varying operating conditions, resulting in increased information leakage. We address this issue by proposing the first reported application of machine learning to recalibrate the responses by predicting the golden responses of the SRAM-based PUF (SRAM-PUF) at different operating conditions with high accuracy. Our recalibration technique is based on a novel collective decision that involves observing the neighborhood cells of the SRAM-PUF, as opposed to the traditional single-cell approach. By leveraging a memory map exhibiting a high correlation in ambient reliability amongst neighboring cells, we indirectly use the physical co-location of SRAM cells to assist neighborhood error prediction. It leads to efficient post-processing for SRAM-PUFs by using helper data generated at ambient conditions only while employing a fixed ECC designed for the same. Subsequently, to justify our claims and validate the efficacy of our proposed methodology, we demonstrate extensive experimentation results over multiple SRAM-PUF instances implemented on the Arduino UNO (an 8-bit microcontroller unit) and its scaled-up version, the Arduino Zero (a 32-bit microcontroller unit) boards, by varying supply voltages from 3.8 to 6.2 V and 7 to 12 V, respectively, and temperature from −25° to 70° C in both cases. Our observations show...

Item Type:Article
Source:Copyright of this article belongs to IEEE.
Keywords:Helper Data; Machine Learning (ML); Min-entropy; Physically Unclonable Functions (Pufs); Process-voltage–temperature (Pvt) Variations; Static Random Access Memory (Sram); Transfer Learning (Tl)
ID Code:142853
Deposited On:25 Jun 2026 09:44
Last Modified:25 Jun 2026 09:44

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