Metavalent Bonding Origins of Unusual Properties of Group IV Chalcogenides

Arora, Raagya ; Waghmare, Umesh V. ; Rao, C. N. R. (2023) Metavalent Bonding Origins of Unusual Properties of Group IV Chalcogenides Advanced Materials, 35 (7). ISSN 0935-9648

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Official URL: http://doi.org/10.1002/adma.202208724

Related URL: http://dx.doi.org/10.1002/adma.202208724

Abstract

A distinct type of metavalent bonding (MVB) is recently proposed to explain an unusual combination of anomalous functional properties of group IV chalcogenide crystals, whose electronic mechanisms and origin remain controversial. Through theoretical analysis of evolution of bonding along continuous paths in structural and chemical composition space, emergence of MVB in rocksalt chalcogenides is demonstrated as a consequence of weakly broken symmetry of parent simple-cubic crystals of Group V metalloids. High electronic degeneracy at the nested Fermi surface of parent metal drives spontaneous breaking of its translational symmetry with structural and chemical fields, which open up a small energy gap and mediate strong coupling between conduction and valence bands making metavalent crystals highly polarizable, conductive, and sensitive to bond-lengths. Stronger symmetry-breaking structural and chemical fields, however, transform them discontinuously to covalent and ionic semiconducting states. MVB involves bonding-antibonding pairwise interactions alternating along linear chains of at least five atoms, which facilitate long-range electron transfer in response to polar fields causing unusual properties. The precise picture of MVB predicts anomalous second-order Raman scattering as an addition to set off their unusual properties, and will guide in design of new metavalent materials with improved thermoelectric, ferroelectric and nontrivial electronic topological properties.

Item Type:Article
Source:Copyright of this article belongs to John Wiley and Sons.
ID Code:135795
Deposited On:18 Aug 2023 09:54
Last Modified:18 Aug 2023 09:54

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