Electron scattering in perovskite-oxide ferroelectric semiconductors

Wemple, S. H. ; DiDomenico, M. ; Jayaraman, A. (1969) Electron scattering in perovskite-oxide ferroelectric semiconductors Physical Review, 180 (2). pp. 547-556. ISSN 0031-899X

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Official URL: http://prola.aps.org/abstract/PR/v180/i2/p547_1

Related URL: http://dx.doi.org/10.1103/PhysRev.180.547


This paper reports new data on the hydrostatic-pressure dependence of the conductivity and static dielectric constant, as well as new Hall-effect data taken over a wide temperature range, in the perovskite-oxide ferroelectrics KTaO3, SrTiO3, BaTiO3, and KTa1-xNbxO3 (x=0.002, 0.1, and 0.35). From the linear dependence of the electron mobility μ and the reciprocal dielectric constant 1/ε on pressure in all materials studied, we conclude that μ∝1/ε+const. Based on the observed temperature dependence of the Hall mobility and the Curie-Weiss behavior of ε, we conclude further that in the perovskite oxides the temperature dependence of the mobility is given by the empirical expression μ∝T-3.5(T-T0+T), T>T0, where T is an experimental constant and T0 is the Curie-Weiss temperature (T0=4°K and T≈140°K for KTaO3, T0=32°K and T≈77°K for SrTiO3, T0=287°K and T≈70°K for KTa0.65Nb0.35O3, and T0=395°K and T≈85°K for BaTiO3). Our experimental results are shown to be inconsistent with previously reported suggestions that the electron mobility in the perovskite oxides is dominated by LO-mode scattering. We suggest, instead, that the electron mobility is determined by a new and strong electron-phonon interaction involving critical-point lattice-polarization fluctuations associated with the soft TO mode.

Item Type:Article
Source:Copyright of this article belongs to American Physical Society.
ID Code:13354
Deposited On:11 Nov 2010 08:25
Last Modified:06 Jun 2011 05:46

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