Bhat, S.V. ; Biswas, Kanishka ; Rao, C.N.R. (2007) Synthesis and optical properties of In-doped GaN nanocrystals Solid State Communications, 141 (6). pp. 325-328. ISSN 00381098
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Official URL: http://doi.org/10.1016/j.ssc.2006.11.013
Related URL: http://dx.doi.org/10.1016/j.ssc.2006.11.013
Abstract
Indium-doped GaN nanocrystals with 5% and 10% In have been prepared by a low temperature solvothermal method using hexamethyldisilazane as the nitriding reagent. The nanocrystals show Raman bands at lower frequencies compared to GaN. Photoluminescence spectra of the In-doped GaN nanocrystals exhibit an increase in the FWHM with the decrease in the PL band energy, the band energy itself decreasing with increase in the In content.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Ltd. |
| ID Code: | 128304 |
| Deposited On: | 03 Nov 2022 05:56 |
| Last Modified: | 03 Nov 2022 05:56 |
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