Dielectric relaxation and anti-ferromagnetic coupling of BiEuO₃ and BiGdO₃

Abstract

BiEuO₃ (BE) and BiGdO₃ (BG) are synthesized by the solid-state reaction technique. Rietveld refinement of the X-ray diffraction data shows that the samples are crystallized in cubic phase at room temperature having Fm3m symmetry with the lattice parameters of 5.4925(2) and 5.4712(2) Å for BE and BG, respectively. Raman spectra of the samples are investigated to obtain the phonon modes of the samples. The dielectric properties of the samples are investigated in the frequency range from 42 Hz to 1.1 MHz and in the temperature range from 303 K to 673 K. An analysis of the real and imaginary parts of impedance is performed assuming a distribution of relaxation times as confirmed by the Cole–Cole plots. The frequency-dependent maxima in the loss tangent are found to obey an Arrhenius law with activation energy ~1 eV for both the samples. The frequency-dependent electrical data are also analyzed in the framework of conductivity formalism. Magnetization of the samples are measured under the field cooled (FC) and zero field cooled (ZFC) modes in the temperature range from 5 K to 300 K applying a magnetic field of 500 Oe. The FC and ZFC susceptibilities show that BE is a Van Vleck paramagnetic material with antiferromagnetic coupling at low temperature whereas BG is an anti-ferromagnetic system. The results are substantiated by the M–H loops of the materials taken at 5 K in the ZFC mode.