Kinetics of chemical vapor deposition

Subrahmanyam, J. ; Lahiri, A. K. ; Abraham, K. P. (1980) Kinetics of chemical vapor deposition Journal of the Electrochemical Society, 127 (6). pp. 1394-1399. ISSN 0013-4651

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A generalized mass transport model is developed for predicting the rate of deposition in chemical vapor deposition (CVD) systems. This combines the generalized method of obtaining equilibrium composition, with elemental fluxbalance expressions. This procedure avoids the usual problems encountered incalculating the rates in multicomponent systems, like writing overall reactionschemes. The dependence of multicomponent diffusivities on the fluxes is accountedin this model using an iterative procedure. The model developed is applied to the deposition of titanium carbide on cemented carbide tool bits from a gas mixture of titanium tetrachloride, toluene, and hydrogen. Experimental deposition rates were obtained using a thermogravimetric assembly. Mass transport controlled rates give an order of magnitude estimates of the observed rates.

Item Type:Article
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ID Code:12214
Deposited On:10 Nov 2010 04:47
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