Lai, Qianxi ; Zhu, Zuhua ; Chen, Yong ; Patil, Satish ; Wudl, Fred (2006) Organic nonvolatile memory by dopant-configurable polymer Applied Physics Letters, 88 (13). p. 133515. ISSN 0003-6951
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Official URL: http://doi.org/10.1063/1.2191874
Related URL: http://dx.doi.org/10.1063/1.2191874
Abstract
We report an organic, nonvolatile memory based on dopant concentration-induced conductance changes in a conjugated polymer. Consisting of a polymer poly [2-methoxy-5-(2′-ethylhexyloxy)-p-phenylene vinylene] (MEH-PPV)/ionic conductor (RbAg4I5) bilayer sandwiched between two metal electrodes, the device is electrically switched between its low-conductance “off” state and high-conductance “on” state reversibly and repeatedly with on/off ratios above two orders of magnitude and pulse durations as short as 1μs when a voltage exceeding its threshold values (>+3.5V or <−3.8V) is applied. The conductance change is attributed to the injection/depletion of iodide dopant ions in the MEH-PPV layer by the applied electric field.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 120610 |
| Deposited On: | 02 Jul 2021 07:03 |
| Last Modified: | 02 Jul 2021 07:03 |
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