Designing a Lower Band Gap Bulk Ferroelectric Material with a Sizable Polarization at Room Temperature

Das, Shyamashis ; Ghara, Somnath ; Mahadevan, Priya ; Sundaresan, A. ; Gopalakrishnan, J. ; Sarma, D. D. (2018) Designing a Lower Band Gap Bulk Ferroelectric Material with a Sizable Polarization at Room Temperature ACS Energy Letters, 3 (5). pp. 1176-1182. ISSN 2380-8195

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Official URL: http://doi.org/10.1021/acsenergylett.8b00492

Related URL: http://dx.doi.org/10.1021/acsenergylett.8b00492

Abstract

A low band gap ferroelectric material with a sizable polarization at ambient conditions would constitute an ideal photovoltaic material to harvest solar energy because of its efficient polarization-driven charge carrier separation. We achieve this elusive goal by codoping a Jahn–Teller Mn3+ and Nb5+ pair for two Ti4+ ions in ferroelectric BaTiO3. Representing a charge-neutral dipole doping, this approach achieves for the first time a bulk ferroelectric oxide with the lowest band gap of 1.66 eV with a sizable polarization of nearly 70% of BaTiO3. We contrast this with the analogous system with Mn3+ replaced by the non-Jahn–Teller Fe3+ (3d5) ion, which even at a much lower level of doping reduces the polarization to 25% without reducing the band gap significantly, establishing the efficacy of the present strategy.

Item Type:Article
Source:Copyright of this article belongs to American Chemical Society.
ID Code:119984
Deposited On:21 Jun 2021 06:49
Last Modified:21 Jun 2021 06:49

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