Synthesis and Characterization of ReS2 and ReSe2 Layered Chalcogenide Single Crystals

Jariwala, Bhakti ; Voiry, Damien ; Jindal, Apoorv ; Chalke, Bhagyashree A. ; Bapat, Rudheer ; Thamizhavel, Arumugam ; Chhowalla, Manish ; Deshmukh, Mandar ; Bhattacharya, Arnab (2016) Synthesis and Characterization of ReS2 and ReSe2 Layered Chalcogenide Single Crystals Chemistry of Materials, 28 (10). pp. 3352-3359. ISSN 0897-4756

Full text not available from this repository.

Official URL:

Related URL:


We report the synthesis of high-quality single crystals of ReS2 and ReSe2 transition metal dichalcogenides using a modified Bridgman method that avoids the use of a halogen transport agent. Comprehensive structural characterization using X-ray diffraction and electron microscopy confirm a distorted triclinic 1T′ structure for both crystals and reveal a lack of Bernal stacking in ReS2. Photoluminescence (PL) measurements on ReS2 show a layer-independent bandgap of 1.51 eV, with increased PL intensity from thicker flakes, confirming interlayer coupling to be negligible in this material. For ReSe2, the bandgap is weakly layer-dependent and decreases from 1.31 eV for thin layers to 1.29 eV in thick flakes. Both chalcogenides show feature-rich Raman spectra whose excitation energy dependence was studied. The lower background doping inherent to our crystal growth process results in high field-effect mobility values of 79 and 0.8 cm2/(V s) for ReS2 and ReSe2, respectively, as extracted from FET structures fabricated from exfoliated flakes. Our work shows ReX2 chalcogenides to be promising 2D materials candidates, especially for optoelectronic devices, without the requirement of having monolayer thin flakes to achieve a direct bandgap.

Item Type:Article
Source:Copyright of this article belongs to American Chemical Society.
ID Code:117673
Deposited On:29 Apr 2021 09:54
Last Modified:29 Apr 2021 09:54

Repository Staff Only: item control page