Magnetotransport properties of individual InAs nanowires

Dhara, Sajal ; Solanki, Hari S. ; Singh, Vibhor ; Narayanan, Arjun ; Chaudhari, Prajakta ; Gokhale, Mahesh ; Bhattacharya, Arnab ; Deshmukh, Mandar M. (2009) Magnetotransport properties of individual InAs nanowires Physical Review B: Condensed Matter and Materials Physics, 79 (12). ISSN 1098-0121

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We probe the magnetotransport properties of individual InAs nanowires in a field-effect transistor geometry. In the low magnetic field regime we observe magnetoresistance that is well described by the weak localization description in diffusive conductors. The weak localization correction is modified to weak antilocalization as the gate voltage is increased. We show that the gate voltage can be used to tune the phase coherence length (lϕ) and spin-orbit length (lso) by a factor of 2. In the high field and low-temperature regime we observe that the mobility of devices can be modified significantly as a function of magnetic field. We argue that the role of skipping orbits and the nature of surface scattering is essential in understanding high-field magnetotransport in nanowires.

Item Type:Article
Source:Copyright of this article belongs to American Physical Society.
ID Code:117660
Deposited On:29 Apr 2021 06:02
Last Modified:29 Apr 2021 06:02

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