High Q electromechanics with InAs nanowire quantum dots

Solanki, Hari S. ; Sengupta, Shamashis ; Dubey, Sudipta ; Singh, Vibhor ; Dhara, Sajal ; Kumar, Anil ; Bhattacharya, Arnab ; Ramakrishnan, S. ; Clerk, Aashish A. ; Deshmukh, Mandar M. (2011) High Q electromechanics with InAs nanowire quantum dots Applied Physics Letters, 99 (21). p. 213104. ISSN 0003-6951

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Official URL: http://doi.org/10.1063/1.3663631

Related URL: http://dx.doi.org/10.1063/1.3663631


In this report, we study electromechanical properties of suspended InAs nanowire resonators. At low temperatures, the nanowire acts as the island of a single electron transistor, and a strong coupling between electron transport and mechanical modes is observed for resonant mechanical driving. Further, as a function of the mechanical drive frequency, the conductance exhibits a Fano lineshape. This arises from the interference between two contributions to potential of the single electron transistor coming from capacitively induced charges and the mechanical oscillation. The quality factor (Q) of these devices is ∼105 at 100 mK.

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