Gupta, Priti ; Rahman, A.A. ; Hatui, Nirupam ; Gokhale, M.R. ; Deshmukh, Mandar M. ; Bhattacharya, Arnab (2013) MOVPE growth of semipolar III-nitride semiconductors on CVD graphene Journal of Crystal Growth, 372 . pp. 105-108. ISSN 0022-0248
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Official URL: http://doi.org/10.1016/j.jcrysgro.2013.03.020
Related URL: http://dx.doi.org/10.1016/j.jcrysgro.2013.03.020
Abstract
We report the growth and characterization of group III-nitride semiconductor layers on graphene grown by chemical vapour deposition. GaN, AlGaN alloys, and InN layers are grown using an AlN nucleation and a buffer layer. We investigate the effect of varying growth temperature and V/III ratio and show that under optimized growth conditions preferentially semipolar oriented nitride layers can be obtained. These layers, though polycrystalline, are highly oriented and show strong room temperature photoluminescence, thus showing graphene to be a novel substrate for the growth of III-nitride materials.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | A3.; Low Pressure Metalorganic Vapor Phase epitaxy; B1. Graphene; B1. Nitrides; B2. Semiconducting III–V Materials. |
| ID Code: | 117643 |
| Deposited On: | 29 Apr 2021 04:46 |
| Last Modified: | 29 Apr 2021 04:46 |
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