Reentrant high-conduction state in CuIr2S4 under pressure

Garg, Alka B. ; Vijayakumar, V. ; Godwal, B. K. ; Choudhury, A. ; Hochheimer, Hans D. (2007) Reentrant high-conduction state in CuIr2S4 under pressure Solid State Communications, 142 (7). pp. 369-372. ISSN 0038-1098

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The results of electrical resistance and angle dispersive X-ray diffraction measurements at high pressures and ambient temperature on the chalcogenide spinel, CuIr2S4 are reported. The resistance increases gradually and reaches around 12 GPa a value that is approximately forty times the initial value. Above 15 GPa, the resistance decreases up to 30 GPa and on further pressure increase tends to saturate at a value slightly above the ambient pressure value. Thus, the material exhibits a reentrant high conducting phase under pressure. The behaviour of the electrical resistance exhibits a close correlation with the structural evolution with pressure.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:A. Inorganic Compounds; B. X-Ray Diffraction; C. Electric Transport; D. High Pressure
ID Code:11737
Deposited On:13 Nov 2010 13:58
Last Modified:02 Jun 2011 08:39

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