Memory switching in bismuth-vanadate glasses

Ghosh, Aswini (1988) Memory switching in bismuth-vanadate glasses Journal of Applied Physics, 64 (5). pp. 2652-2655. ISSN 0021-8979

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The electrical V-I characteristics of thin blown films of V2O5-Bi2O3 glasses with 95-70 mol % V2O5 were studied in the temperature range 200-400 K. It was observed that at lower fields, the bulk resistance controlled the current. At higher fields, all the glass compositions showed memory switching characteristics. The decrease in the threshold voltage and increase in the threshold current with the increase of V2O5 content in the glasses and also with increasing temperature were observed. The switching action was associated with a phase transition from a disordered glassy state to an ordered devitrified state due to self-heating. The ideal thermal model was shown to be applicable to the present glasses.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
ID Code:11729
Deposited On:13 Nov 2010 13:59
Last Modified:13 Nov 2010 13:59

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