On the possibility of a phonon mediated transport anomaly in MgB2 under compression

Garg, Alka B. ; Modak, P. ; Gaitonde, D. M. ; Rao, R. S. ; Vijayakumar, V. ; Godwal, B. K. (2005) On the possibility of a phonon mediated transport anomaly in MgB2 under compression Solid State Communications, 135 (5). pp. 285-289. ISSN 0038-1098

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S00381...

Related URL: http://dx.doi.org/10.1016/j.ssc.2005.05.011

Abstract

Results of electrical resistance measurements on MgB2 at ambient temperature up to 25 GPa are presented. An abrupt reduction of nearly 30% in resistance around 18 GPa is observed. Band structure calculations in the presence of a frozen-in distortion of the E2g phonon mode reveal that one of the closed Fermi sheets corresponding to the s-band opens along the Γ-A direction at this pressure. It is suggested that the anomaly observed in the resistance is due to this phonon mediated electronic topological transition (ETT).

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:A. DAC; A. MgB; D. Electrical Resistance; D. ETT; E. High Pressure
ID Code:11728
Deposited On:13 Nov 2010 13:59
Last Modified:02 Jun 2011 08:44

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