Transport properties of iron-bismuthate glassy semiconductors

Ghosh, Aswini (1989) Transport properties of iron-bismuthate glassy semiconductors Journal of Applied Physics, 66 (6). pp. 2425-2429. ISSN 0021-8979

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Iron-bismuthate glassy semiconductors were prepared in a range of compositions and their electrical transport properties were measured in the temperature range of 100-500 K. The electrical data were analyzed in the light of the models of polaronic hopping conduction. The analysis showed that the high-temperature conductivity was well explained by the polaronic models. But these models failed to account for the decrease of the activation energy with the decrease of temperature. At lower temperatures, a variable range analysis was made. This analysis provided reasonable values of the decay constant for the localized states and also for the density of states at the Fermi level.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
ID Code:11727
Deposited On:13 Nov 2010 13:59
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